Explore how VHU Series capacitors reduce DC-DC power consumption in automotive applications, ensuring stable performance and ...

Industry investment, OCP standardization efforts, and APEC discussions point to SSTs as a medium-term data center reality. At APEC, there were murmurs on solid-state transformer (SST) technology, ...

Ultra-thin GaN chiplet integrates power and logic, enabling efficient, high-density designs for AI, data centers, and wireless systems. Intel Foundry has demonstrated an ultra-thin gallium nitride ...

AOS showcases advanced solutions for AI Core Power. These new products offer advanced features that enable designers to meet power management challenges in several key application areas.

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...

Look around you and list out the first 10 electronic appliances that you see. Chances are very high that all 10 of them use a USB-C port, especially if they have been manufactured in the last two to ...

SiC and GaN stand center stage, controlling many different industries’ dynamics. With power management becoming a fundamental aspect of emerging electronics applications such as vehicle ...

The recommended insulation monitoring circuit is illustrated in Figure 1. K 1 and K 2 represent the main application positions of Novosense solid-state relays (SSRs) in the insulation monitoring ...

The FinFET three-dimensional transistor architecture has become fundamental to modern semiconductor manufacturing. FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in ...

Transient spikes can be caused by lightning strikes, nearby machinery, power surges from load switching, etc. An example is a modern automobile where ever-increasing on-board electronics are connected ...

One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...