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Abstract: This article presents a comprehensive physics-based model for back-end-of-line (BEOL)-compatible oxide-semiconductor-based ferroelectric field-effect transistors (FeFETs). The proposed model ...
Abstract: We report a physics-based surface-potential compact model to describe current-voltage (I-V) relationship in a few-layered ambipolar black phosphorus (BP) transistors. To model the device ...
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