Analysis of Single-Event Leakage Current Degradation Induced by Heavy-Ion Irradiation in SiC MOSFETs
Abstract: The application of silicon carbide MOSFETs (SiC MOSFETs) in space is severely restricted by single-event burnout (SEB) and single-event leakage current (SELC) induced by heavy ions, yet the ...
Abstract: To assess the reliability of GaN power transistors, off-state leakage characteristic is measured for Schottky p-GaN gate HEMTs under negative gate biases. It is found that the drain leakage ...
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