IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...
Join Teledyne LeCroy to learn more about how to test and qualify gallium nitride (GaN) metal–oxide–semiconductor field-effect transistors (MOSFETs), silicon carbide (SiC) MOSFETs and SiC insulated ...
You almost have to feel some empathy for insulated-gate bipolar transistors (IGBTs). They have been the workhorse of many motor and power projects for decades and continue in that role. But now it ...
Abstract: To develop a high-power and small-size pulse power source, the mechanism of maximum-current limitation for a 10-kV silicon carbide (SiC)-insulated-gate bipolar transistor (IGBT) device ...
Abstract: This article investigates efficiency gains achieved using an 800-V dc bus and wide bandgap silicon carbide (SiC) semiconductors for a light-duty electric vehicle (EV), rather than an ...
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