Abstract: Electrodynamic simulations in the Yee-lattice finite-difference time-domain method (YL-FDTDM) require half-unit-cell and half-time-unit offsets between electric and magnetic field components ...
Abstract: Among the wide-bandgap devices, gallium nitride high electron mobility transistors (GaN HEMTs) are contributing to the high power density technology of power conversion systems due to their ...
To build using the container, you need to have podman properly configured on your system. You can find more detailed instructions about the container in the Getting Started section of the ...
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