The key to identifying the location of an ESD source is by measuring the time of arrival between the two antennas.
Abstract: To assess the reliability of GaN power transistors, off-state leakage characteristic is measured for Schottky p-GaN gate HEMTs under negative gate biases. It is found that the drain leakage ...
Abstract: This letter presents a novel structure for electrostatic discharge (ESD) protection of millimeter wave (mm-wave) input/output (I/O). The proposed structure features a meticulously embedded ...
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