Deep vertical holes and re-entrant features challenge the best metrology methods.

TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...

The 74ABT00 is a quad 2-input NAND gate. This device is fully specified for partial power down applications using Ioff. The Ioff circuitry disables the output, preventing the potentially damaging ...

There is a growing demand for higher-density NAND flash across the global storage market. For the time being, this demand has been satisfied through many developments, not only in the capabilities of ...