Both 18A and N2 rely on gate-all-around (GAA) transistors, but unlike Intel, TSMC has managed to shrink its high-density SRAM bit cell size quite aggressively compared to its previous-generation ...

TSMC is on track to start high-volume production of chips on N2 (2nm-class), its first production technology that relies on gate-all-around (GAA) nanosheet transistors, in the second half of this ...

TSMC claims N2 defect density is lower than N3 defect density two quarters before mass production starts, reveals N2 HVM time frame.

A research study on low noise and high-performance transistors led by Suprem Das, assistant professor of industrial and manufacturing systems engineering, in collaboration with researchers at ...

TSMC officially introduced its N2 (2nm class) manufacturing technology, its first node that will use gate-all-around field-effect transistors (GAAFETs), at its 2022 TSMC Technology Symposium. The ...

In summary, TSMC holds the transistor density lead with N2, but Intel's 18A could take the performance crown thanks to architectural advancements and innovations like PowerVia.